The PE15A5118 is a high power amplifier that operates from 1000 MHz to 3000 MHz and generates 50 watts of saturated output power. The module utilizes GaN and chip-and-wire technology in the manufacturing process that ensures state-of-the-art power performance with excellent power-to-volume ratio that's ideal for multi octave braodband high power RF linear applications. This Class AB amplifier is designed for a 50 ohm input/output impedance and offers high efficiency and high linearity, operating over a wide dynamic range with impressive typical performance that includes 47 dB of gain, -60 dBc spurious suppression, and -15 dBc harmonics at 20W. The design has input RF power handling capability up to +10 dBm max without damage, and can handle a load VSWR at Pout of 30W of 3.0:1 for all load phase and amplitude conditions under continuous operation. Typical DC bias requirements include +28V and 8A of current at 50W. The module uses an SMA female connectors at the RF input and output ports. The DC interface incorporates a D-Sub 9 pin male connector for DC bias, Enable with TTL logic control, Current sense, and Temperature sense functions. A mating D-Sub socket connector is included. The rugged amplifier design operates over a wide temperature range from -20oC to +60oC, and can withstand relative humidity exposure up to 95% maximum. An available heatsink with cooling fan (model PE15G5060F) is recommended to maintain an optimum baseplate temperature during operation.