The PE15A5110 is a high power amplifier that operates from 20 MHz to 500 MHz and generates 200 watts of saturated output power. The module utilizes LDMOS and chip-and-wire technology in the manufacturing process that ensures state-of-the-art power performance with excellent power-to-volume ratio that's ideal for broadband high power RF, and VHF and UHF linear applications. This Class AB amplifier is designed for a 50 ohm input/output impedance and offers high efficiency and high linearity, operating over a wide dynamic range with impressive typical performance that includes 53 dB of gain, -50 dBc spurious suppression, and -10 dBc harmonics at 100W. The design has input RF power handling capability up to +10 dBm max without damage, and can handle a load VSWR at Pout of 100W of 3.0:1 for all load phase and amplitude conditions under continuous operation. Typical DC bias requirements include +32V and 20A of current at 200W. The module uses an SMA female connector on the RF input, and an N Type female connector on the RF output. The DC interface incorporates a D-Sub 7 pin male connector for DC bias, Enable with TTL logic control, Current sense, and Temperature sense functions. A mating D-Sub socket connector is included. The rugged amplifier design operates over a wide temperature range from -10oC to +40oC, and can withstand relative humidity exposure up to 95% maximum. An available heatsink with cooling fan (model PE15G5069F) is recommended to maintain an optimum baseplate temperature during operation.